1 power transistors p ar ameter collector to base v oltag e collector to emitter v oltag e emitter to base v oltage peak collector current collector current base current collector po w er dissipation junction temperature storage temperature symbol v cbo v ces v ceo v ebo i cp i c i b p c t j t stg ratings 900 900 800 7 5 3 1 40 2 150 C55 to +150 unit v v v v a a a w ?c ?c t c =25 c t a=25 c 2sC3743 silicon npn tr iple diffusion planar type f or high breakdo wn v oltage high-speed s witching n f eatures l high-speed switching l w ide ar ea of safe oper ation (aso) with high breakdo wn v olta ge l satisf actory linearity of fo ward current transfer ratio h fe l full-pack package which can be installed to the heat sink with one scr e w n absolute maximum ratings (t c =25?c) n electr ical char acter istics (t c =25?c) p a r ameter collector cutof f current emitter cutof f current collector to emitter v oltag e f orw ard current transfer ra tio collector to emitter satur a tion v oltage base to emitter satura tion v oltage t r ansition frequenc y t u r n-on time storage time f all time symbol i cbo i ebo v ceo h fe1 h fe2 v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 900v , i e = 0 v eb = 7v , i c = 0 i c = 10ma, i b = 0 v ce = 5v , i c = 0.1a v ce = 5v , i c = 0.8a i c = 0.8a, i b = 0.16a i c = 0.8a, i b = 0.16a v ce = 5v , i c = 0.1a, f = 1mhz i c = 0.8a, i b1 = 0.16a, i b2 = C 0.32a, v cc = 250v min 800 6 6 typ 4 max 50 50 0.6 1.2 1.0 4.0 1.0 unit m a m a v v v mhz m s m s m s unit: mm 1:base 2:collector 3:emitter t oC220 full p a ck p a ckag e(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1 http://
2 p o w er t r ansistors 2sC3743 p c t a i c v ce v ce(sat) i c v be(sat) i c h fe i c t on , t stg , t f i c area of safe operation (aso) 01 2 10 8 26 4 0 5 4 3 2 1 t c =25?c 200ma 300ma 100ma 50ma 20ma 400ma i b =600ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =5 ?5?c 25?c t c =100?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.03 0.1 0.3 1 3 0.01 0.03 0.1 0.3 1 3 10 30 i c /i b =5 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =5v 25?c t c =100?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 02. 0 1.6 0.4 1 .2 0.8 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t f t on pulsed t w =1ms duty cycle=1% i c /i b =5 (2i b1 =? b2 ) v cc =250v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 1 0 100 1000 3 3 0 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp dc 10ms t=1ms i c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 160 40 120 80 140 20 100 60 0 80 60 20 50 70 40 10 30 (1) (3) (2) (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =2.0w) ambient temperature ta ( ?c ) collector power dissipation p c ( w )
3 p o w er t r ansistors 2sC3743 ar ea of saf e oper a tion, r e v erse bias aso re v er se bias aso measuring circuit r th(t) t 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 10 ? 1 10 10 2 10 3 (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w ) 0 1600 400 1200 800 1400 200 1000 600 0 8 6 2 5 7 4 1 3 i cp i c l coil =100 h i c /i b =5 (2i b1 =? b2 ) t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) l coil i c i b1 v in t w ? b2 v clamp v cc t.u.t
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